منابع مشابه
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process
We describe a relatively simple, reliable, and reproducible preparation technique, the precursor oxidation process, for making VO2 films with strong semiconductor-to-metal phase transition. Sputter-deposited metal precursor V films were oxidized in situ in the deposition chamber for 2.5–7 h at 370–415 °C in 0.2 Torr O2 to form 22–220 nm VO2. The strength resistivity ratio, RR= S / M and sharpne...
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Density functional approach was used to study the isotropic- nematic (I-N) transition and calculate the values of freezing parameters of the Gay- Berne liquid crystal model. New direct and pair correlation functions of a molecular fluid with Gay- Berne pair potential were used. These new functions were used in density functional theory as input to calculate the isotropic- nematic transition den...
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A major source of energy dissipation and surface wear is the kinetic friction at the interfaces of sliding bodies. Traditionally, on a macroscopic scale, this undesirable effect is reduced with lubricating the surfaces by introducing oil into their interface. An interesting phenomenon, called superlubricity, has been reported on a nanometer scale where dry (without lubricant oil) fruition and w...
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ژورنال
عنوان ژورنال: Nature
سال: 1983
ISSN: 0028-0836,1476-4687
DOI: 10.1038/305095a0